unisonic technologies co., ltd 15N10 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2013 unisonic technologies co., ltd qw-r502-846.b 14.7a, 100v (d-s) n-channel power mosfet ? description the utc 15N10 is an n-channel enhanc ement mosfet, it uses utc?s advanced technology to provide customers with a minimum on-state resistance, high switchi ng speed and low gate charge. the utc 15N10 is suitable for high efficiency switching dc/dc converter, lcd display inverter and load switch. ? features * r ds(on) =0.08 ? @v gs =10v,i d =8a * low gate charge (typ=24nc) * low c rss (typ=23pf) * high switching speed ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 15N10l-tn3-t 15N10g-tn3-t to-252 g d s tube 15N10l-tn3-r 15N10g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
15N10 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-846.b ? absolute maximum ratings (t a =25c, unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 100 v gate-source voltage v gss 20 v drain current continuous t c =25c, t j =150c i d 14.7 a t c =70c, t j =150c 13.6 a pulsed i dm 59 a power dissipation t c =25c p d 34.7 w t c =70c 22.2 w operating junction temperature t j -55~+150 c note: absolute maximum ratings are those values be yond which the device coul d be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics (t a =25c, unless otherwise noted) parameter symbol ratings unit junction to case (note) jc 3.6 c/w note: the device mounted on 1in 2 fr4 board with 2 oz copper. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 100 v drain-source leakage current i dss v ds =80v, v gs =0v 1 a gate-source leakage current i gss v gs =+20v, v ds =0v +100 na v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 3 v drain-source on-state resistance (note) r ds ( on ) v gs =10v, i d =8a 80 100 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =15v, f=1mhz 890 pf output capacitance c oss 58 pf reverse transfer capacitance c rss 23 pf switching parameters total gate charge q g v gs =10v, v ds =80v, i d =10a 24 nc total gate charge q g v gs =4.5v, v ds =80v, i d =10a 13 nc gate to source charge q gs 4.6 nc gate to drain charge q gd 7.6 nc gate-resistance r g v ds =0v, v gs =0v, f=1mhz 0.9 ? turn-on delay time t d ( on ) v ds =50v, r l =5 ? , v gen =10v, r g =1 ? 14 ns rise time t r 33 ns turn-off delay time t d ( off ) 39 ns fall-time t f 5 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =8a, v gs =0v 0.9 1.2 v note: pulse test: pulse width 300us, duty cycle 2%, guaranteed by design, not subject to production testing.
15N10 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-846.b ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off
15N10 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-846.b ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
15N10 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-846.b ? typical characteristics drain current vs. drain-source breakdown voltage drain-source breakdown voltage, bv dss (v) 0.4 0 drain current vs. gate threshold voltage gate threshold voltage, v th (v) 1.2 1.6 2.4 0.8 2.0 0 50 100 150 200 250 300 0 30 90 120 60 0 50 100 150 200 250 300 v ds =v gs drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 4 10 0 0.1 0.2 0.3 0.4 v gs =10v 2 6 8 0.6 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) drain current, i d (a) 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 0.5 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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